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Boron–oxygen complex yields n-type surface layer in semiconducting diamond
Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits developme...
Autores principales: | Liu, Xiaobing, Chen, Xin, Singh, David J., Stern, Richard A., Wu, Jinsong, Petitgirard, Sylvain, Bina, Craig R., Jacobsen, Steven D. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
National Academy of Sciences
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6475370/ https://www.ncbi.nlm.nih.gov/pubmed/30936308 http://dx.doi.org/10.1073/pnas.1821612116 |
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