High-κ Dielectric on ReS(2): In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al(2)O(3)

We report an excellent growth behavior of a high-κ dielectric on ReS(2), a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al(2)O(3) thin film on the UV-Ozone pretreated surface of ReS(2) yields a pinhole free and conformal growth. In-situ half-cyc...

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Detalles Bibliográficos
Autores principales: Khosravi, Ava, Addou, Rafik, Catalano, Massimo, Kim, Jiyoung, Wallace, Robert M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6479988/
https://www.ncbi.nlm.nih.gov/pubmed/30935054
http://dx.doi.org/10.3390/ma12071056

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6479988/
https://www.ncbi.nlm.nih.gov/pubmed/30935054
http://dx.doi.org/10.3390/ma12071056

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