Performance Improvement of a Nonvolatile UV TD Sensor Using SAHAOS with a High Temperature Annealed, Partially Nano-Crystallized Trapping Layer

This study shows that a silicon–aluminum oxide–hafnium aluminum oxide-silicon oxide–silicon capacitor device with a high temperature pre-metal-anneal-treated and partially-nanocrystallized hafnium aluminum oxide, (hereafter PNC-SAHAOS) can successfully increase the performance of a nonvolatile ultra...

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Detalles Bibliográficos
Autor principal: Hsieh, Wen-Ching
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6480127/
https://www.ncbi.nlm.nih.gov/pubmed/30939786
http://dx.doi.org/10.3390/s19071570

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6480127/
https://www.ncbi.nlm.nih.gov/pubmed/30939786
http://dx.doi.org/10.3390/s19071570

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