Dataset on large area nano-crystalline graphite film (NCG) grown on SiO(2) using plasma-enhanced chemical vapour deposition

A Si wafer coated with a low temperature oxide (LTO) was used as substrate (Si/SiO(2)) during the deposition of a thick nano-crystalline graphite (NCG) film by means of plasma-enhanced chemical vapour deposition (PECVD) procedure. The process parameters, the atomic force (AFM) and scanning electron (SEM) micrographs, Raman spectrum and X-ray diffraction (XRD) pattern are herein illustrated. The as deposited NCG film was electrochemically pretreated (3 mA applied current, during 240 s, in 10 mM phosphate buffer saline (PBS) solution containing 0.1 M KCl, pH 7) and thereafter used as electrode for sensing the caffeic acid content in lyophilised berries and dried chokeberries in “Nano-crystalline graphite film on SiO(2): Electrochemistry and electro-analytical application” [1].