Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

We investigated the lateral distribution of the equilibrium carrier concentration (n(0)) along the channel and the effects of channel length (L) on the source-drain series resistance (R(ext)) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-fi...

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Detalles Bibliográficos
Autores principales: Hong, Sae-Young, Kim, Hee-Joong, Kim, Dae-Hwan, Jeong, Ha-Yun, Song, Sang-Hun, Cho, In-Tak, Noh, Jiyong, Yun, Pil Sang, Lee, Seok-Woo, Park, Kwon-Shik, Yoon, SooYoung, Kang, In Byeong, Kwon, Hyuck-In
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6488651/
https://www.ncbi.nlm.nih.gov/pubmed/31036883
http://dx.doi.org/10.1038/s41598-019-43186-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6488651/
https://www.ncbi.nlm.nih.gov/pubmed/31036883
http://dx.doi.org/10.1038/s41598-019-43186-7

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