Structure and Dielectric Property of High-k ZrO(2) Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

High-k metal oxide films are vital for the future development of microelectronics technology. In this work, ZrO(2) films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as precursors. The relatively constant deposition rate of 0.125 nm/cycle is...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Junqing, Li, Junpeng, Wu, Jianzhuo, Sun, Jiaming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6505036/
https://www.ncbi.nlm.nih.gov/pubmed/31065821
http://dx.doi.org/10.1186/s11671-019-2989-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6505036/
https://www.ncbi.nlm.nih.gov/pubmed/31065821
http://dx.doi.org/10.1186/s11671-019-2989-8

Ejemplares similares