Spectral dependence of THz emission from InN and InGaN layers

Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial layers with indium content of 16%, 68%, and 80%. In InN and...

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Detalles Bibliográficos
Autores principales: Norkus, Ričardas, Aleksiejūnas, Ramūnas, Kadys, Arūnas, Kolenda, Marek, Tamulaitis, Gintautas, Krotkus, Arūnas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6506490/
https://www.ncbi.nlm.nih.gov/pubmed/31068629
http://dx.doi.org/10.1038/s41598-019-43642-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6506490/
https://www.ncbi.nlm.nih.gov/pubmed/31068629
http://dx.doi.org/10.1038/s41598-019-43642-4

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