First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

The electronic deep level states of defects embedded in freestanding GaN crystals exfoliated from Si substrates by hydride vapour phase epitaxy (HVPE) is investigated for the first time, using deep level transient spectroscopy (DLTS). The electron traps are positioned 0.24 eV (E1) and 1.06 eV (E2) b...

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Detalles Bibliográficos
Autores principales: Lee, Moonsang, Ahn, Chang Wan, Vu, Thi Kim Oanh, Lee, Hyun Uk, Kim, Eun Kyu, Park, Sungsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6509132/
https://www.ncbi.nlm.nih.gov/pubmed/31073203
http://dx.doi.org/10.1038/s41598-019-43583-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6509132/
https://www.ncbi.nlm.nih.gov/pubmed/31073203
http://dx.doi.org/10.1038/s41598-019-43583-y

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