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Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer
Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is challenging to create intrinsic traps in the dielectric layer without high temperature processing steps. The main issue is to optimize the leakage current and in...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6514002/ https://www.ncbi.nlm.nih.gov/pubmed/31086205 http://dx.doi.org/10.1038/s41467-019-10142-y |