A GaN-Based Wireless Monitoring System for High-Temperature Applications

A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temper...

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Detalles Bibliográficos
Autores principales: Hassan, Ahmad, Ali, Mohamed, Trigui, Aref, Savaria, Yvon, Sawan, Mohamad
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6514704/
https://www.ncbi.nlm.nih.gov/pubmed/31013978
http://dx.doi.org/10.3390/s19081785

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6514704/
https://www.ncbi.nlm.nih.gov/pubmed/31013978
http://dx.doi.org/10.3390/s19081785

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