Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta(2)O(5)-SiO(2)-Si Structure During Long-Term Operation

We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta(2)O(5)-SiO(2)-Si. The n-channel MISFET elements were fabricated on silicon single chips together with tempera...

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Detalles Bibliográficos
Autores principales: Podlepetsky, Boris, Samotaev, Nikolay, Nikiforova, Marina, Kovalenko, Andrew
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6514816/
https://www.ncbi.nlm.nih.gov/pubmed/31003477
http://dx.doi.org/10.3390/s19081855

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6514816/
https://www.ncbi.nlm.nih.gov/pubmed/31003477
http://dx.doi.org/10.3390/s19081855

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