Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO(2)/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/A...

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Detalles Bibliográficos
Autores principales: Zhao, Xiaofeng, Li, Yi, Ai, Chunpeng, Wen, Dianzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515171/
https://www.ncbi.nlm.nih.gov/pubmed/31003535
http://dx.doi.org/10.3390/ma12081282

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515171/
https://www.ncbi.nlm.nih.gov/pubmed/31003535
http://dx.doi.org/10.3390/ma12081282

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