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A 0.0014 mm(2) 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range
This work presents a complementary metal–oxide–semiconductor (CMOS) ultra-low power temperature sensor chip for cold chain applications with temperatures down to −60 °C. The sensor chip is composed of a temperature-to-current converter to generate a current proportional to the absolute temperature (...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515268/ https://www.ncbi.nlm.nih.gov/pubmed/31013907 http://dx.doi.org/10.3390/s19081777 |
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author | Yang, Wendi Jiang, Hanjun Wang, Zhihua |
author_facet | Yang, Wendi Jiang, Hanjun Wang, Zhihua |
author_sort | Yang, Wendi |
collection | PubMed |
description | This work presents a complementary metal–oxide–semiconductor (CMOS) ultra-low power temperature sensor chip for cold chain applications with temperatures down to −60 °C. The sensor chip is composed of a temperature-to-current converter to generate a current proportional to the absolute temperature (PTAT), a current controlled oscillator to convert the current to a frequency signal, and a counter as the frequency-to-digital converter. Unlike the conventional linear error calibration method, the nonlinear error of the PTAT current under the low temperature range is fully characterized based on the device model files provided by the foundry. Simulation has been performed, which clearly shows the nonlinear model is much more accurate than the linear model. A nonlinear error calibration method, which requires only two-point calibration, is then proposed. The temperature sensor chip has been designed and fabricated in a 0.13 μm CMOS process, with a total active die area of 0.0014 mm(2). The sensor only draws a 140 nA current from a 1.1 V supply, with the key transistors working in the deep subthreshold region. Measurement results show that the proposed nonlinear calibration can decrease the measurement error from −0.9 to +1.1 °C for the measurement range of −60 to +40 °C, in comparison with the error of −1.8 to +5.3 °C using the conventional linear error calibration. |
format | Online Article Text |
id | pubmed-6515268 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-65152682019-05-30 A 0.0014 mm(2) 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range Yang, Wendi Jiang, Hanjun Wang, Zhihua Sensors (Basel) Article This work presents a complementary metal–oxide–semiconductor (CMOS) ultra-low power temperature sensor chip for cold chain applications with temperatures down to −60 °C. The sensor chip is composed of a temperature-to-current converter to generate a current proportional to the absolute temperature (PTAT), a current controlled oscillator to convert the current to a frequency signal, and a counter as the frequency-to-digital converter. Unlike the conventional linear error calibration method, the nonlinear error of the PTAT current under the low temperature range is fully characterized based on the device model files provided by the foundry. Simulation has been performed, which clearly shows the nonlinear model is much more accurate than the linear model. A nonlinear error calibration method, which requires only two-point calibration, is then proposed. The temperature sensor chip has been designed and fabricated in a 0.13 μm CMOS process, with a total active die area of 0.0014 mm(2). The sensor only draws a 140 nA current from a 1.1 V supply, with the key transistors working in the deep subthreshold region. Measurement results show that the proposed nonlinear calibration can decrease the measurement error from −0.9 to +1.1 °C for the measurement range of −60 to +40 °C, in comparison with the error of −1.8 to +5.3 °C using the conventional linear error calibration. MDPI 2019-04-13 /pmc/articles/PMC6515268/ /pubmed/31013907 http://dx.doi.org/10.3390/s19081777 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yang, Wendi Jiang, Hanjun Wang, Zhihua A 0.0014 mm(2) 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range |
title | A 0.0014 mm(2) 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range |
title_full | A 0.0014 mm(2) 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range |
title_fullStr | A 0.0014 mm(2) 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range |
title_full_unstemmed | A 0.0014 mm(2) 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range |
title_short | A 0.0014 mm(2) 150 nW CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range |
title_sort | 0.0014 mm(2) 150 nw cmos temperature sensor with nonlinearity characterization and calibration for the −60 to +40 °c measurement range |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515268/ https://www.ncbi.nlm.nih.gov/pubmed/31013907 http://dx.doi.org/10.3390/s19081777 |
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