Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser

The behaviour of semiconductor materials and devices subjected to femtosecond laser irradiation has been under scrutiny, for many reasons, during the last decade. In particular, recent works have shown that the specific functionality and/or geometry of semiconductor devices, among which non-volatile...

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Detalles Bibliográficos
Autores principales: Chiquet, Philippe, Chambonneau, Maxime, Della Marca, Vincenzo, Postel-Pellerin, Jérémy, Canet, Pierre, Souiki-Figuigui, Sarra, Idda, Guillaume, Portal, Jean-Michel, Grojo, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517431/
https://www.ncbi.nlm.nih.gov/pubmed/31089158
http://dx.doi.org/10.1038/s41598-019-43344-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517431/
https://www.ncbi.nlm.nih.gov/pubmed/31089158
http://dx.doi.org/10.1038/s41598-019-43344-x

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