Cargando…
Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser
The behaviour of semiconductor materials and devices subjected to femtosecond laser irradiation has been under scrutiny, for many reasons, during the last decade. In particular, recent works have shown that the specific functionality and/or geometry of semiconductor devices, among which non-volatile...
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517431/ https://www.ncbi.nlm.nih.gov/pubmed/31089158 http://dx.doi.org/10.1038/s41598-019-43344-x |