Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

ABSTRACT: Wafer-scale, conformal, two-dimensional (2D) TiO(2)-Ga(2)O(3) n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO(2) substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of...

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Detalles Bibliográficos
Autores principales: Xu, Hongyan, Han, Feng, Xia, Chengkai, Wang, Siyan, Ramachandran, Ranish M., Detavernier, Christophe, Wei, Minsong, Lin, Liwei, Zhuiykov, Serge
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517468/
https://www.ncbi.nlm.nih.gov/pubmed/31089900
http://dx.doi.org/10.1186/s11671-019-2991-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517468/
https://www.ncbi.nlm.nih.gov/pubmed/31089900
http://dx.doi.org/10.1186/s11671-019-2991-1

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