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Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

ABSTRACT: Wafer-scale, conformal, two-dimensional (2D) TiO(2)-Ga(2)O(3) n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO(2) substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of...

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Autores principales: Xu, Hongyan, Han, Feng, Xia, Chengkai, Wang, Siyan, Ramachandran, Ranish M., Detavernier, Christophe, Wei, Minsong, Lin, Liwei, Zhuiykov, Serge
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517468/
https://www.ncbi.nlm.nih.gov/pubmed/31089900
http://dx.doi.org/10.1186/s11671-019-2991-1
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author Xu, Hongyan
Han, Feng
Xia, Chengkai
Wang, Siyan
Ramachandran, Ranish M.
Detavernier, Christophe
Wei, Minsong
Lin, Liwei
Zhuiykov, Serge
author_facet Xu, Hongyan
Han, Feng
Xia, Chengkai
Wang, Siyan
Ramachandran, Ranish M.
Detavernier, Christophe
Wei, Minsong
Lin, Liwei
Zhuiykov, Serge
author_sort Xu, Hongyan
collection PubMed
description ABSTRACT: Wafer-scale, conformal, two-dimensional (2D) TiO(2)-Ga(2)O(3) n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO(2) substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO(2)-Ga(2)O(3) n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO(2)-Ga(2)O(3) n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light (λ = 254 nm) irradiation. The improvement of TiO(2)-Ga(2)O(3) n-p heterostructure capabilities is due to the development of the defects on Ga(2)O(3)-TiO(2) interface, which were able to trap electrons faster. GRAPHICAL ABSTRACT: [Image: see text]
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spelling pubmed-65174682019-06-21 Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition Xu, Hongyan Han, Feng Xia, Chengkai Wang, Siyan Ramachandran, Ranish M. Detavernier, Christophe Wei, Minsong Lin, Liwei Zhuiykov, Serge Nanoscale Res Lett Nano Express ABSTRACT: Wafer-scale, conformal, two-dimensional (2D) TiO(2)-Ga(2)O(3) n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO(2) substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO(2)-Ga(2)O(3) n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO(2)-Ga(2)O(3) n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light (λ = 254 nm) irradiation. The improvement of TiO(2)-Ga(2)O(3) n-p heterostructure capabilities is due to the development of the defects on Ga(2)O(3)-TiO(2) interface, which were able to trap electrons faster. GRAPHICAL ABSTRACT: [Image: see text] Springer US 2019-05-14 /pmc/articles/PMC6517468/ /pubmed/31089900 http://dx.doi.org/10.1186/s11671-019-2991-1 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Xu, Hongyan
Han, Feng
Xia, Chengkai
Wang, Siyan
Ramachandran, Ranish M.
Detavernier, Christophe
Wei, Minsong
Lin, Liwei
Zhuiykov, Serge
Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
title Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
title_full Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
title_fullStr Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
title_full_unstemmed Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
title_short Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
title_sort wafer-scale fabrication of sub-10 nm tio(2)-ga(2)o(3)n-p heterojunctions with efficient photocatalytic activity by atomic layer deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517468/
https://www.ncbi.nlm.nih.gov/pubmed/31089900
http://dx.doi.org/10.1186/s11671-019-2991-1
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