Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

The effects of diffuse Cu(+) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on the microstructure and performance during a clean etch stopper (CL-ES) process and a back channel etch (BCE) process are investigated and compared. The CL-ES layer formed with a clean compone...

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Detalles Bibliográficos
Autores principales: Chung, Jae-Moon, Wu, Fang, Jeong, Seung-Woo, Kim, Ji-Hoon, Xiang, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6522603/
https://www.ncbi.nlm.nih.gov/pubmed/31098841
http://dx.doi.org/10.1186/s11671-019-3001-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6522603/
https://www.ncbi.nlm.nih.gov/pubmed/31098841
http://dx.doi.org/10.1186/s11671-019-3001-3

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