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Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure
The effects of diffuse Cu(+) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on the microstructure and performance during a clean etch stopper (CL-ES) process and a back channel etch (BCE) process are investigated and compared. The CL-ES layer formed with a clean compone...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6522603/ https://www.ncbi.nlm.nih.gov/pubmed/31098841 http://dx.doi.org/10.1186/s11671-019-3001-3 |