Artificial Neural Network for Response Inference of a Nonvolatile Resistance-Switch Array

An artificial neural network was utilized in the behavior inference of a random crossbar array (10 × 9 or 28 × 27 in size) of nonvolatile binary resistance-switches (in a high resistance state (HRS) or low resistance state (LRS)) in response to a randomly applied voltage array. The employed artifici...

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Detalles Bibliográficos
Autores principales: Kim, Guhyun, Kornijcuk, Vladimir, Kim, Dohun, Kim, Inho, Hwang, Cheol Seong, Jeong, Doo Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523178/
https://www.ncbi.nlm.nih.gov/pubmed/30934793
http://dx.doi.org/10.3390/mi10040219

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523178/
https://www.ncbi.nlm.nih.gov/pubmed/30934793
http://dx.doi.org/10.3390/mi10040219

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