A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage...

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Detalles Bibliográficos
Autores principales: Choi, Woo Young, Yoon, Gyuhan, Chung, Woo Young, Cho, Younghoon, Shin, Seongun, Ahn, Kwang Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523397/
https://www.ncbi.nlm.nih.gov/pubmed/30999667
http://dx.doi.org/10.3390/mi10040256

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523397/
https://www.ncbi.nlm.nih.gov/pubmed/30999667
http://dx.doi.org/10.3390/mi10040256

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