A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. Howe...

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Detalles Bibliográficos
Autores principales: Hua, Qilin, Wu, Huaqiang, Gao, Bin, Zhao, Meiran, Li, Yujia, Li, Xinyi, Hou, Xiang, (Marvin) Chang, Meng‐Fan, Zhou, Peng, Qian, He
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6524079/
https://www.ncbi.nlm.nih.gov/pubmed/31131198
http://dx.doi.org/10.1002/advs.201900024

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6524079/
https://www.ncbi.nlm.nih.gov/pubmed/31131198
http://dx.doi.org/10.1002/advs.201900024

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