Cargando…

A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

Leakage interference between memory cells is the primary obstacle for enlarging X‐point memory arrays. Metal‐filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. Howe...

Descripción completa

Detalles Bibliográficos
Autores principales:	Hua, Qilin, Wu, Huaqiang, Gao, Bin, Zhao, Meiran, Li, Yujia, Li, Xinyi, Hou, Xiang, (Marvin) Chang, Meng‐Fan, Zhou, Peng, Qian, He
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2019
Materias:	Full Papers
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6524079/ https://www.ncbi.nlm.nih.gov/pubmed/31131198 http://dx.doi.org/10.1002/advs.201900024

Ejemplares similares

Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019)
por: Hua, Qilin, et al.
Publicado: (2019)

High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots
por: Li, Yujia, et al.
Publicado: (2020)

Threshold Switching of Ag-Ga(2)Te(3) Selector with High Endurance for Applications to Cross-Point Arrays
por: Kim, Jaeyeon, et al.
Publicado: (2021)

Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior
por: Seo, Jongseon, et al.
Publicado: (2022)

Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications
por: Zhou, Xi, et al.
Publicado: (2023)

Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory
por: Han, Un-Bin, et al.
Publicado: (2016)

Nanosensors Based on Structural Memory Carbon Nanodots for Ag(+) Fluorescence Determination
por: Zhou, Xi, et al.
Publicado: (2021)

Bidirectional-nonlinear threshold switching behaviors and thermally robust stability of ZnTe selectors by nitrogen annealing
por: Jang, Gabriel, et al.
Publicado: (2020)

Trilayer Tunnel Selectors for Memristor Memory Cells
por: Choi, Byung Joon, et al.
Publicado: (2015)

Zero-order switches and developmental thresholds
por: Goldbeter, Albert
Publicado: (2005)

Selectors
por: Jayne, John E, et al.
Publicado: (2001)

Self-assembly of ordered graphene nanodot arrays
por: Camilli, Luca, et al.
Publicado: (2017)

Construction of a Molecular Switch and Selector under Electrochemical Control
por: Shi, Hao, et al.
Publicado: (2017)

Bright and Multicolor Chemiluminescent Carbon Nanodots for Advanced Information Encryption
por: Shen, Cheng‐Long, et al.
Publicado: (2019)

Electroforming-free threshold switching of NbO(x)–based selector devices by controlling conducting phases in the NbO(x) layer for the application to crossbar array architectures
por: Park, Kitae, et al.
Publicado: (2022)

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions
por: Sánta, Botond, et al.
Publicado: (2020)

Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability
por: Wu, Renjie, et al.
Publicado: (2023)

A nucleoside kinase as a dual selector for genetic switches and circuits
por: Tashiro, Yohei, et al.
Publicado: (2011)

Line selector
por: CERN PhotoLab
Publicado: (1967)

Erratum: Self-assembly of ordered graphene nanodot arrays
por: Camilli, Luca, et al.
Publicado: (2017)

Universal chiral-triggered magnetization switching in confined nanodots
por: Martinez, Eduardo, et al.
Publicado: (2015)

Effect of Ag Concentration Dispersed in HfO(x) Thin Films on Threshold Switching
por: Jeong, Won Hee, et al.
Publicado: (2020)

Near‐Infrared Chemiluminescent Carbon Nanodots and Their Application in Reactive Oxygen Species Bioimaging
por: Shen, Cheng‐Long, et al.
Publicado: (2020)

Ordered, Random, Monotonic and Non-Monotonic Digital Nanodot Gradients
por: Ongo, Grant, et al.
Publicado: (2014)

Higher order vortex gyrotropic modes in circular ferromagnetic nanodots
por: Ding, Junjia, et al.
Publicado: (2014)

Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices
por: Wu, Zuheng, et al.
Publicado: (2019)

Cambridge word selector
Publicado: (1995)

Selectors, specificity, and the cascade
por: Meyer, Eric A
Publicado: (2012)

The Vivitron charge selector
por: Jegham, E, et al.
Publicado: (1999)

Multi-layered NiO(y)/NbO(x)/NiO(y) fast drift-free threshold switch with high I(on)/I(off) ratio for selector application
por: Park, Jaehyuk, et al.
Publicado: (2017)

Size‐Controlled Graphene Nanodot Arrays/ZnO Hybrids for High‐Performance UV Photodetectors
por: Tang, Ruidie, et al.
Publicado: (2017)

Amylase-Protected Ag Nanodots for in vivo Fluorescence Imaging and Photodynamic Therapy of Tumors
por: Wen, Shuguang, et al.
Publicado: (2020)

Atomic threshold-switching enabled MoS(2) transistors towards ultralow-power electronics
por: Hua, Qilin, et al.
Publicado: (2020)

Co-reductive fabrication of carbon nanodots with high quantum yield for bioimaging of bacteria
por: Wang, Jiajun, et al.
Publicado: (2018)

Luminescent supramolecular hydrogels from a tripeptide and nitrogen-doped carbon nanodots
por: Cringoli, Maria C, et al.
Publicado: (2017)

A dual-functional Ta/TaO(x)/Ru device with both nonlinear selector and resistive switching behaviors
por: Wang, Rui, et al.
Publicado: (2021)

Bucket Selector System For Kekb
por: Kikutani, E, et al.
Publicado: (1999)

Instant jQuery selectors
por: De Rosa, Aurelio
Publicado: (2013)

TSEBRA: transcript selector for BRAKER
por: Gabriel, Lars, et al.
Publicado: (2021)

A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
por: Song, Bing, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_8je3cucggr23h4n8lgctvrsjak