Long-term drift of Si-MOS quantum dots with intentional donor implants

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift...

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Detalles Bibliográficos
Autores principales: Rudolph, M., Sarabi, B., Murray, R., Carroll, M. S., Zimmerman, Neil M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6529408/
https://www.ncbi.nlm.nih.gov/pubmed/31114008
http://dx.doi.org/10.1038/s41598-019-43995-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6529408/
https://www.ncbi.nlm.nih.gov/pubmed/31114008
http://dx.doi.org/10.1038/s41598-019-43995-w

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