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New development of atomic layer deposition: processes, methods and applications

Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many applications owing to its distinct abilities. They include uniform deposition of conformal films with controllable thickness, even on complex three-dimensional surfaces, and can improve the efficiency of ele...

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Autores principales: Oviroh, Peter Ozaveshe, Akbarzadeh, Rokhsareh, Pan, Dongqing, Coetzee, Rigardt Alfred Maarten, Jen, Tien-Chien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6534251/
https://www.ncbi.nlm.nih.gov/pubmed/31164953
http://dx.doi.org/10.1080/14686996.2019.1599694
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author Oviroh, Peter Ozaveshe
Akbarzadeh, Rokhsareh
Pan, Dongqing
Coetzee, Rigardt Alfred Maarten
Jen, Tien-Chien
author_facet Oviroh, Peter Ozaveshe
Akbarzadeh, Rokhsareh
Pan, Dongqing
Coetzee, Rigardt Alfred Maarten
Jen, Tien-Chien
author_sort Oviroh, Peter Ozaveshe
collection PubMed
description Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many applications owing to its distinct abilities. They include uniform deposition of conformal films with controllable thickness, even on complex three-dimensional surfaces, and can improve the efficiency of electronic devices. This technology has attracted significant interest both for fundamental understanding how the new functional materials can be synthesized by ALD and for numerous practical applications, particularly in advanced nanopatterning for microelectronics, energy storage systems, desalinations, catalysis and medical fields. This review introduces the progress made in ALD, both for computational and experimental methodologies, and provides an outlook of this emerging technology in comparison with other film deposition methods. It discusses experimental approaches and factors that affect the deposition and presents simulation methods, such as molecular dynamics and computational fluid dynamics, which help determine and predict effective ways to optimize ALD processes, hence enabling the reduction in cost, energy waste and adverse environmental impacts. Specific examples are chosen to illustrate the progress in ALD processes and applications that showed a considerable impact on other technologies.
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spelling pubmed-65342512019-06-04 New development of atomic layer deposition: processes, methods and applications Oviroh, Peter Ozaveshe Akbarzadeh, Rokhsareh Pan, Dongqing Coetzee, Rigardt Alfred Maarten Jen, Tien-Chien Sci Technol Adv Mater Engineering and Structural materials Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many applications owing to its distinct abilities. They include uniform deposition of conformal films with controllable thickness, even on complex three-dimensional surfaces, and can improve the efficiency of electronic devices. This technology has attracted significant interest both for fundamental understanding how the new functional materials can be synthesized by ALD and for numerous practical applications, particularly in advanced nanopatterning for microelectronics, energy storage systems, desalinations, catalysis and medical fields. This review introduces the progress made in ALD, both for computational and experimental methodologies, and provides an outlook of this emerging technology in comparison with other film deposition methods. It discusses experimental approaches and factors that affect the deposition and presents simulation methods, such as molecular dynamics and computational fluid dynamics, which help determine and predict effective ways to optimize ALD processes, hence enabling the reduction in cost, energy waste and adverse environmental impacts. Specific examples are chosen to illustrate the progress in ALD processes and applications that showed a considerable impact on other technologies. Taylor & Francis 2019-05-23 /pmc/articles/PMC6534251/ /pubmed/31164953 http://dx.doi.org/10.1080/14686996.2019.1599694 Text en © 2019 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group. http://creativecommons.org/licenses/by/4.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Engineering and Structural materials
Oviroh, Peter Ozaveshe
Akbarzadeh, Rokhsareh
Pan, Dongqing
Coetzee, Rigardt Alfred Maarten
Jen, Tien-Chien
New development of atomic layer deposition: processes, methods and applications
title New development of atomic layer deposition: processes, methods and applications
title_full New development of atomic layer deposition: processes, methods and applications
title_fullStr New development of atomic layer deposition: processes, methods and applications
title_full_unstemmed New development of atomic layer deposition: processes, methods and applications
title_short New development of atomic layer deposition: processes, methods and applications
title_sort new development of atomic layer deposition: processes, methods and applications
topic Engineering and Structural materials
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6534251/
https://www.ncbi.nlm.nih.gov/pubmed/31164953
http://dx.doi.org/10.1080/14686996.2019.1599694
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