Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances

We demonstrate the negative capacitance (NC) effect of HfZrO(x)-based field-effect transistors (FETs) in the experiments. Improved I(DS), SS, and G(m) of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET. In this experiment, the bottom MIS transistors with diffe...

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Detalles Bibliográficos
Autores principales: Li, Jing, Liu, Yan, Han, Genquan, Zhou, Jiuren, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6534638/
https://www.ncbi.nlm.nih.gov/pubmed/31127388
http://dx.doi.org/10.1186/s11671-019-3013-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6534638/
https://www.ncbi.nlm.nih.gov/pubmed/31127388
http://dx.doi.org/10.1186/s11671-019-3013-z

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