Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces

Amorphous oxide semiconductor (AOS)-based Schottky diodes have been utilized for selectors in crossbar array memories to improve cell-to-cell uniformity with a low-temperature process. However, thermal instability at interfaces between the AOSs and metal electrodes can be a critical issue for the im...

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Detalles Bibliográficos
Autores principales: Lim, Seung-Min, Yeon, Han-Wool, Lee, Gi-Baek, Jin, Min-Gi, Lee, Seung-Yong, Jo, Janghyun, Kim, Miyoung, Joo, Young-Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6536494/
https://www.ncbi.nlm.nih.gov/pubmed/31133709
http://dx.doi.org/10.1038/s41598-019-44421-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6536494/
https://www.ncbi.nlm.nih.gov/pubmed/31133709
http://dx.doi.org/10.1038/s41598-019-44421-x

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