Correction to: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Detalles Bibliográficos
Autores principales: Xu, Hongyan, Han, Feng, Xia, Chengkai, Wang, Siyan, Ramachandran, Ranjith K., Detavernier, Christophe, Wei, Minsong, Lin, Liwei, Zhuiykov, Serge
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Correction
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6536561/
https://www.ncbi.nlm.nih.gov/pubmed/31134408
http://dx.doi.org/10.1186/s11671-019-3028-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6536561/
https://www.ncbi.nlm.nih.gov/pubmed/31134408
http://dx.doi.org/10.1186/s11671-019-3028-5

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