Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) n...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Zhuo, Qi, Zhao, Liang, Longfei, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538706/
https://www.ncbi.nlm.nih.gov/pubmed/31139957
http://dx.doi.org/10.1186/s11671-019-3017-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538706/
https://www.ncbi.nlm.nih.gov/pubmed/31139957
http://dx.doi.org/10.1186/s11671-019-3017-8

Ejemplares similares