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Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection
A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) n...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538706/ https://www.ncbi.nlm.nih.gov/pubmed/31139957 http://dx.doi.org/10.1186/s11671-019-3017-8 |