A Multi-level Memristor Based on Al-Doped HfO(2) Thin Film

Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO(2), have been favored by lots of researchers because of its simple structure, high integration, fast operation...

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Detalles Bibliográficos
Autores principales: Wu, Lei, Liu, Hongxia, Li, Jiabin, Wang, Shulong, Wang, Xing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538729/
https://www.ncbi.nlm.nih.gov/pubmed/31139948
http://dx.doi.org/10.1186/s11671-019-3015-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538729/
https://www.ncbi.nlm.nih.gov/pubmed/31139948
http://dx.doi.org/10.1186/s11671-019-3015-x

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