Influence of Te-Doping on Catalyst-Free VS InAs Nanowires

We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission...

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Detalles Bibliográficos
Autores principales: Güsken, Nicholas A., Rieger, Torsten, Mussler, Gregor, Lepsa, Mihail Ion, Grützmacher, Detlev
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538743/
https://www.ncbi.nlm.nih.gov/pubmed/31140033
http://dx.doi.org/10.1186/s11671-019-3004-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538743/
https://www.ncbi.nlm.nih.gov/pubmed/31140033
http://dx.doi.org/10.1186/s11671-019-3004-0

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