Influence of Te-Doping on Catalyst-Free VS InAs Nanowires

We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about 1 × 10(−5) Torr while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is strongly affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-019-3004-0) contains supplementary material, which is available to authorized users.