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Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538743/ https://www.ncbi.nlm.nih.gov/pubmed/31140033 http://dx.doi.org/10.1186/s11671-019-3004-0 |