Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Co...

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Detalles Bibliográficos
Autores principales: Kurita, Kazunari, Kadono, Takeshi, Shigematsu, Satoshi, Hirose, Ryo, Okuyama, Ryosuke, Onaka-Masada, Ayumi, Okuda, Hidehiko, Koga, Yoshihiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6540011/
https://www.ncbi.nlm.nih.gov/pubmed/31060216
http://dx.doi.org/10.3390/s19092073

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6540011/
https://www.ncbi.nlm.nih.gov/pubmed/31060216
http://dx.doi.org/10.3390/s19092073

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