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Electronic and magnetic properties of doped black phosphorene with concentration dependence

In this paper, we employed first-principles calculations and chose Si and S atoms as impurities to explore the concentration-dependence of electronic structure and magnetism of doped phosphorene. It is found that the stability of doped phosphorene improves continuously with increasing the supercell...

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Detalles Bibliográficos
Autores principales: Wang, Ke, Wang, Hai, Zhang, Min, Liu, Yan, Zhao, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6541339/
https://www.ncbi.nlm.nih.gov/pubmed/31165026
http://dx.doi.org/10.3762/bjnano.10.100