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Electronic and magnetic properties of doped black phosphorene with concentration dependence
In this paper, we employed first-principles calculations and chose Si and S atoms as impurities to explore the concentration-dependence of electronic structure and magnetism of doped phosphorene. It is found that the stability of doped phosphorene improves continuously with increasing the supercell...
Autores principales: | Wang, Ke, Wang, Hai, Zhang, Min, Liu, Yan, Zhao, Wei |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6541339/ https://www.ncbi.nlm.nih.gov/pubmed/31165026 http://dx.doi.org/10.3762/bjnano.10.100 |
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