Investigation of Nitridation on the Band Alignment at MoS(2)/HfO(2) Interfaces

The effect of nitridation treatment on the band alignment between few-layer MoS(2) and HfO(2) has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS(2)/HfO(2) with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.3...

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Detalles Bibliográficos
Autores principales: Huan, Ya-Wei, Liu, Wen-Jun, Tang, Xiao-Bing, Xue, Xiao-Yong, Wang, Xiao-Lei, Sun, Qing-Qing, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6541675/
https://www.ncbi.nlm.nih.gov/pubmed/31144185
http://dx.doi.org/10.1186/s11671-019-3020-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6541675/
https://www.ncbi.nlm.nih.gov/pubmed/31144185
http://dx.doi.org/10.1186/s11671-019-3020-0

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