Cargando…
Investigation of Nitridation on the Band Alignment at MoS(2)/HfO(2) Interfaces
The effect of nitridation treatment on the band alignment between few-layer MoS(2) and HfO(2) has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS(2)/HfO(2) with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.3...
Autores principales: | Huan, Ya-Wei, Liu, Wen-Jun, Tang, Xiao-Bing, Xue, Xiao-Yong, Wang, Xiao-Lei, Sun, Qing-Qing, Ding, Shi-Jin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6541675/ https://www.ncbi.nlm.nih.gov/pubmed/31144185 http://dx.doi.org/10.1186/s11671-019-3020-0 |
Ejemplares similares
-
Investigation of Band Alignment for Hybrid 2D-MoS(2)/3D-β-Ga(2)O(3) Heterojunctions with Nitridation
por: Huan, Ya-Wei, et al.
Publicado: (2019) -
In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO(2)/TiN Structure for CMOS Applications
por: Xu, Da-Peng, et al.
Publicado: (2017) -
III-Nitride grating grown on freestanding HfO(2 )gratings
por: Wang, Yongjin, et al.
Publicado: (2011) -
Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
por: Zhang, Xiao-Ying, et al.
Publicado: (2019) -
Conduction Mechanism and Improved Endurance in HfO(2)-Based RRAM with Nitridation Treatment
por: Yuan, Fang-Yuan, et al.
Publicado: (2017)