Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field

The refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of light-emitting devices. Revealing the dependence of the refractive index of AlN on the threading dislocations is meaningful since high-density threadi...

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Detalles Bibliográficos
Autores principales: Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Wu, You, Kai, Cuihong, Wang, Yong, Luo, Xuguang, Feng, Zhe Chuan, Li, Dabing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6542867/
https://www.ncbi.nlm.nih.gov/pubmed/31147797
http://dx.doi.org/10.1186/s11671-019-3018-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6542867/
https://www.ncbi.nlm.nih.gov/pubmed/31147797
http://dx.doi.org/10.1186/s11671-019-3018-7

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