Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field

The refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of light-emitting devices. Revealing the dependence of the refractive index of AlN on the threading dislocations is meaningful since high-density threading dislocations usually exist in AlN. In this paper, the effect of different dislocation densities on the refractive index of AlN is investigated. With the increase of dislocation densities from 4.24 × 10(8) to 3.48 × 10(9) cm(− 2), the refractive index of AlN decreases from 2.2508 to 2.2102 at 280 nm. Further study demonstrates that the nanoscale strain field around dislocations changes the propagation of light and thus decreases the refractive index of AlN. This study will be beneficial to the design of optoelectronic devices and thus realizing high-performance deep ultraviolet optoelectronic devices. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-019-3018-7) contains supplementary material, which is available to authorized users.