An electrical characterisation methodology for identifying the switching mechanism in TiO(2) memristive stacks

Resistive random access memories (RRAMs) can be programmed to discrete resistive levels on demand via voltage pulses with appropriate amplitude and widths. This tuneability enables the design of various emerging concepts, to name a few: neuromorphic applications and reconfigurable circuits. Despite...

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Detalles Bibliográficos
Autores principales: Michalas, L., Stathopoulos, S., Khiat, A., Prodromakis, T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6546741/
https://www.ncbi.nlm.nih.gov/pubmed/31160619
http://dx.doi.org/10.1038/s41598-019-44607-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6546741/
https://www.ncbi.nlm.nih.gov/pubmed/31160619
http://dx.doi.org/10.1038/s41598-019-44607-3

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