Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Highly polarized photoluminescence (PL) from c-plane InGaN/GaN multiple quantum wells (MQWs) grown on stripe-shaped cavity-engineered sapphire substrate (SCES) was realized. The polarization ratio was as high as 0.74 at room temperature. High-resolution X-ray reciprocal space mapping measurements re...

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Detalles Bibliográficos
Autores principales: Kim, Jongmyeong, Lee, Seungmin, Oh, Jehong, Ryu, Jungel, Park, Yongjo, Park, Seoung-Hwan, Yoon, Euijoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6547675/
https://www.ncbi.nlm.nih.gov/pubmed/31164674
http://dx.doi.org/10.1038/s41598-019-44519-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6547675/
https://www.ncbi.nlm.nih.gov/pubmed/31164674
http://dx.doi.org/10.1038/s41598-019-44519-2

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