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Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate
Highly polarized photoluminescence (PL) from c-plane InGaN/GaN multiple quantum wells (MQWs) grown on stripe-shaped cavity-engineered sapphire substrate (SCES) was realized. The polarization ratio was as high as 0.74 at room temperature. High-resolution X-ray reciprocal space mapping measurements re...
Autores principales: | Kim, Jongmyeong, Lee, Seungmin, Oh, Jehong, Ryu, Jungel, Park, Yongjo, Park, Seoung-Hwan, Yoon, Euijoon |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6547675/ https://www.ncbi.nlm.nih.gov/pubmed/31164674 http://dx.doi.org/10.1038/s41598-019-44519-2 |
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