Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure

Depending on the mobile species involved in the resistive switching process, redox random access memories and conductive bridge random access memories are widely studied with distinct switching mechanisms. Although the two resistance switching types have faithfully proved to be electrochemically lin...

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Detalles Bibliográficos
Autores principales: Chen, Xiaoli, Zeng, Kelin, Zhu, Xin, Ding, Guanglong, Zou, Ting, Zhang, Chen, Zhou, Kui, Zhou, Ye, Han, Su‐Ting
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6548956/
https://www.ncbi.nlm.nih.gov/pubmed/31179227
http://dx.doi.org/10.1002/advs.201900213

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6548956/
https://www.ncbi.nlm.nih.gov/pubmed/31179227
http://dx.doi.org/10.1002/advs.201900213

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