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Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure
Depending on the mobile species involved in the resistive switching process, redox random access memories and conductive bridge random access memories are widely studied with distinct switching mechanisms. Although the two resistance switching types have faithfully proved to be electrochemically lin...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6548956/ https://www.ncbi.nlm.nih.gov/pubmed/31179227 http://dx.doi.org/10.1002/advs.201900213 |