Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature

Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated...

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Detalles Bibliográficos
Autores principales: Yu, Byoung-Soo, Jeon, Jun-Young, Kang, Byeong-Cheol, Lee, Woobin, Kim, Yong-Hoon, Ha, Tae-Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6558031/
https://www.ncbi.nlm.nih.gov/pubmed/31182751
http://dx.doi.org/10.1038/s41598-019-44948-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6558031/
https://www.ncbi.nlm.nih.gov/pubmed/31182751
http://dx.doi.org/10.1038/s41598-019-44948-z

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