High Mobility Ge pMOSFETs with ZrO(2) Dielectric: Impacts of Post Annealing

This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO(2) dielectric. For the transistors without PDA, on-state current (I(ON)), subthresho...

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Detalles Bibliográficos
Autores principales: Liu, Huan, Han, Genquan, Liu, Yan, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6560113/
https://www.ncbi.nlm.nih.gov/pubmed/31187310
http://dx.doi.org/10.1186/s11671-019-3037-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6560113/
https://www.ncbi.nlm.nih.gov/pubmed/31187310
http://dx.doi.org/10.1186/s11671-019-3037-4

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