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High Mobility Ge pMOSFETs with ZrO(2) Dielectric: Impacts of Post Annealing
This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO(2) dielectric. For the transistors without PDA, on-state current (I(ON)), subthresho...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6560113/ https://www.ncbi.nlm.nih.gov/pubmed/31187310 http://dx.doi.org/10.1186/s11671-019-3037-4 |