Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN or W bottom electrode (BE). The crystallization behavior is chara...

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Detalles Bibliográficos
Autores principales: Oh, Seung Ik, Im, In Hyuk, Yoo, Chanyoung, Ryu, Sung Yeon, Kim, Yong, Choi, Seok, Eom, Taeyong, Hwang, Cheol Seong, Choi, Byung Joon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562481/
https://www.ncbi.nlm.nih.gov/pubmed/31035543
http://dx.doi.org/10.3390/mi10050281

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562481/
https://www.ncbi.nlm.nih.gov/pubmed/31035543
http://dx.doi.org/10.3390/mi10050281

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